Thermal Conductive Ceramics
  •  LT1800 Aluminum Nitride Thermal Ceramics
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  • 63.jpg
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  •  LT1800 Aluminum Nitride Thermal Ceramics
  • 8.jpg
  • 11.jpg
  • 13.jpg
  • 63.jpg
  • 64.jpg
  • 65.jpg

LT1800 Aluminum Nitride Thermal Ceramics

Specification:
Thickness: 0.385mm 0.5mm 0.635mm 0.75mm 1.0mm
Laser process into any shape you need
Introduction:
The thermal conductivity of AlN ceramic sheet is 180W / m.k, which is 7-10 times of that of alumina ceramic. Excellent mechanical properties, good machinability, high dimensional accuracy, smooth surface, no micro cracks, bending and so on. Low dielectric constant and dielectric loss, reliable electrical insulation performance. It is nontoxic, 1800 ℃ resistant, oil resistant, chemical resistant, and has the same coefficient of thermal expansion as silicon, no hygroscopicity, and stable performance under high temperature and high humidity conditions. With the wide development of microelectronic equipment, high thermal conductivity AlN ceramic chip as a matrix material or packaging material has been widely valued and applied.
  • Product introduction
  • Technical Parameters
  • Product Application
  • Product Characteristics
The thermal conductivity of AlN ceramic sheet is 180W / m.k, which is 7-10 times of that of alumina ceramic. Excellent mechanical properties, good machinability, high dimensional accuracy, smooth surface, no micro cracks, bending and so on. Low dielectric constant and dielectric loss, reliable electrical insulation performance. It is nontoxic, 1800 ℃ resistant, oil resistant, chemical resistant, and has the same coefficient of thermal expansion as silicon, no hygroscopicity, and stable performance under high temperature and high humidity conditions. With the wide development of microelectronic equipment, high thermal conductivity AlN ceramic chip as a matrix material or packaging material has been widely valued and applied.
Test Item
Unit LT1800 Test Methods
Color
- light cyan
Visually
Specific Gravity
g/cm3
3.33
GB/T 2413
ThermalConductivity(25℃)
W/m·K
180
ISO 22007-2
Dielectric Constant
1MHz
8~10
GB/T 5594.4
Breakdown Voltage
KV/mm
≥17
GB/T 5593
Flexural strength
MPa
≥450
GB/T 5593
Warpage

≤2
-
Surface Roughness
μm
0.3-0.6
GB/T 6062
Water Absorption
%
0 GB/T 3299
Volume Resistivity(20℃)
Ω.cm
≥1014
GB/T 5594.5
Thermal Expansivity
10-6-1 (20-300℃)
2.0-3.0
GB/T 5594.3
10-6-1 (300-800℃)
2.0-3.0


Size (mm)
Thickness
0.385
0.5
0.635
0.75
1.0
Length*width
50.8×50.8 / 76×76 / 101.6×101.6 / 114.3×114.3 / 127×127 / 140×190

Optoelectronic communication device
High frequency microwave application device
Automotive electronics module
Application of Aerospace Military Electronics
LED / high power module
High thermal conductivity, high voltage insulation
High temperature and humidity resistance
Good mechanical properties, high bending strength
Low dielectric, effective anti electronic signal interference

Contact

Tel:+86-13691979380

E-mail:ElvinLen@szutd.com

Address:Union Tenda Technology Park, No. 61, Zhangqi Road, Guixiang Community,Guanlan Street, Longhua District, Shenzhen